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Same model may have multiple batches, images only for reference.
IRF3710ZLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF3710ZLPBF

Part No IRF3710ZLPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description AUTOMOTIVE MOSFET | MOSFET N-CH 100V 59A TO-262
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Part Status Last Time Buy
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 59A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 18mOhm at 35A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 120nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2900pF at 25V
Power Dissipation (Maximum) 160W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1186993-IRF3710ZLPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3710ZLPBF CAD Model

Description

The Infineon Technologies IRF3710ZLPBF is a MOSFET transistor with an N-Channel polarity.

  • Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (ID): 59A
  • Rds On (Maximum) @ Id, Vgs: 18mOhm @ 35A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Package: TO-262
  • Power Dissipation (Maximum): 160W
  • Manufacturer: Infineon Technologies

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82+ $4.2435 $347.9670
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