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IPB107N20N3 G

Part No IPB107N20N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 88A TO263-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 270μA
Gate Charge (Qg) (Maximum) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7100pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 10.7 mOhm @ 88A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 760008-IPB107N20N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB107N20N3 G CAD Model

Description

The Infineon Technologies IPB107N20N3 G is a high-performance MOSFET from Infineon Technologies.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Current Rating: 88A (Tc)
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2971 $51.8840
85+ $1.2150 $103.2750
130+ $1.1739 $152.6070
185+ $1.0918 $201.9830
240+ $1.0508 $252.1920
300+ $1.0098 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 76,074 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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