The IPB117N20NFD is a power MOSFET from Infineon Technologies, belonging to the OptiMOS™ NFD family. This N-channel MOSFET is designed for a broad range of power switching applications, offering high efficiency and reliability.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• Motor control
• Battery management systems

Features

• Low on-resistance (Rds(on))
• Logic level driving
• Avalanche rated
• 100% Avalanche tested
• Superior thermal resistance
• N-channel, normal level

Benefits

• Increased system efficiency due to low Rds(on)
• Direct logic drive simplifies design
• Robustness for demanding applications
• Efficient heat dissipation

Additional Details

The IPB117N20NFD features a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of up to 40A (depending on the cooling conditions). Its low gate charge (Qg) ensures fast switching speeds and minimizes switching losses. The device is available in a PG-TO263-3 package (D2PAK). The Rds(on) is typically 11.7 mOhm at Vgs=10V. This MOSFET is particularly well-suited for high-frequency switching applications where efficiency is paramount. It is RoHS compliant and halogen-free. Its thermal resistance junction to case is very low which makes it suitable for high power application where heatsinking is employed.