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Same model may have multiple batches, images only for reference.
IPB156N22NFDATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB156N22NFDATMA1

Part No IPB156N22NFDATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 220V 72A TO263-3 / N-Channel 220 V 72A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Datasheet
IPB156N22NFDATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™FD
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 220 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6930 pF @ 110 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IPB156
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351165-IPB156N22NFDATMA1
Ultra Librarian 3D Model Ultra Librarian IPB156N22NFDATMA1 CAD Model

Description

The IPB156N22NFDATMA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 220V
  • Power Dissipation: 300W (Tc)
  • Voltage Supply: ±20V
  • Gate Charge (Qg): 87nC @ 10V
  • Package: Tape & Reel (TR)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: Surface Mount
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • ECCN: EAR99

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