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Same model may have multiple batches, images only for reference.
IPB35N10S3L-26 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB35N10S3L-26

Part No IPB35N10S3L-26
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFETs N-Ch 100V 35A D2PAK-2 OptiMOS-T
Datasheet
IPB35N10S3L-26 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 35 A
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
Qg - Gate Charge 39 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 71 W
Ultra Librarian 3D Model Ultra Librarian IPB35N10S3L-26 CAD Model

Description

Features

• N-channel - Enhancement mode<br />• Automotive AEC Q101 qualified<br />• MSL1 up to 260°C peak reflow<br />• 175°C operating temperature<br />• RoHS compliant<br />• 100% Avalanche tested

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