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Same model may have multiple batches, images only for reference.
IPB35N10S3L26ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB35N10S3L26ATMA1

Part No IPB35N10S3L26ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO263-3
Datasheet
IPB35N10S3L26ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 39μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 2700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 26.3 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045792-IPB35N10S3L26ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB35N10S3L26ATMA1 CAD Model

Description

The Infineon Technologies 1045792-IPB35N10S3L26ATMA1 is an N-channel MOSFET transistor with a maximum power dissipation of 71W (Tc).

  • Packaging: reel - TR
  • Mounting: SMD (SMT)
  • Technology: MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 35A (Tc)
  • Maximum Rds On @ Id,Vgs: 26.3 mOhm @ 35A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 39nC @ 10V
  • Maximum Input Capacitance: 2700pF @ 25V
  • Gate-Source Threshold Voltage: 2.4V @ 39μA
  • Drive Voltage (max Rds On, min Rds On): 4.5V, 10V
  • Supply and Demand Status: balanced

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