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IPB45N04S4L08ATMA1

Part No IPB45N04S4L08ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 45A TO263-3-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 17μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 2340pF @ 25V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 7.6 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045793-IPB45N04S4L08ATMA1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IPB45N04S4L08ATMA1 CAD Model

Description

The Infineon Technologies IPB45N04S4L08ATMA1 is a MOSFET transistor with an N-Channel polarity.

  • Maximum Power Dissipation: 45W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 45A (Tc)
  • Maximum Gate-Source Voltage: +20V, -16V
  • Maximum Rds On @ Id,Vgs: 7.6 mOhm @ 45A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 17μA
  • Maximum Gate Charge: 30nC @ 10V
  • Case/Package: PG-TO263-3-2
  • Mounting: SMD (SMT) technology
  • Category: Discrete Semiconductor Product
  • Status: obsolete (EOL)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7375 $59.0000
195+ $0.6051 $117.9945
300+ $0.5863 $175.8900
410+ $0.5673 $232.5930
530+ $0.5484 $290.6520
705+ $0.4917 $346.6485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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