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Same model may have multiple batches, images only for reference.
IPB47N10SL-26 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB47N10SL-26

Part No IPB47N10SL-26
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series SIPMOS
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs 135nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 175W (Tc)
Rds On (Maximum) @ Id, Vgs 26 mOhm @ 33A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1186047-IPB47N10SL-26
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Family Name IPB47N10SL-26
Introduction Date August 24, 2001
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IPB47N10SL-26 CAD Model

Description

The Infineon Technologies SIPMOS is a N-Channel transistor with a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package.

  • Current Rating: 47A (Tc)
  • Power Dissipation: 175W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Gate-Source Threshold Voltage: 2V @ 2mA
  • Rds On (Maximum) @ Id, Vgs: 26 mOhm @ 33A, 10V
  • Gate-Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 25V
  • Gate Charge (Qg) (Maximum) @ Vgs: 135nC @ 10V
  • Halogen Free: Yes

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