The Infineon Technologies IPB50R250CPATMA1 is an N-Channel MOSFET with a drain-source breakdown voltage of 550V and a continuous drain current of 13A at 25°C.

• Manufacturer: Infineon Technologies
• Channel Type: N-Channel
• Drain-Source Breakdown Voltage: 550V
• Continuous Drain Current @ 25°C: 13A
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id,Vgs: 250 mOhm @ 7.8A, 10V
• Package: PG-TO263-3-2
• Package Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Gate-Source Threshold Voltage: 3.5V @ 520μA
• Gate Charge (Max): 36nC @ 10V
• Input Capacitance (Max): 1420pF @ 100V
• Applications: Power supplies, DC-DC converters, and motor control