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IPB65R125C7

Part No IPB65R125C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 650V 12A 3.5V 101W 125mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package TO-263
Drain to Source Voltage 650V
Current - Continuous Drain(Id) 12A
Operating Temperature - -55℃~+150℃
Gate Threshold Voltage (Vgs(th)) 3.5V
Pd - Power Dissipation 101W
RDS(on) 125mΩ@10V
Number 1 N-channel
Input Capacitance(Ciss) 1.67nF
Gate Charge(Qg) 35nC@10V
Ultra Librarian 3D Model Ultra Librarian IPB65R125C7 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.4926 $52.3890
35+ $2.8657 $100.2995
55+ $2.7762 $152.6910
75+ $2.6866 $201.4950
97+ $2.5971 $251.9187
129+ $2.3284 $300.3636
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,100 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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