The IPB65R150CFDA is a high-performance CoolMOS™ CFD7A power MOSFET from Infineon Technologies. This MOSFET is designed for use in a variety of power electronics applications, offering excellent switching performance, low on-state resistance, and robust body diode characteristics. It is particularly well-suited for applications requiring high efficiency and reliability.

Applications

• Server Power Supplies: Used in AC-DC power supplies for servers, providing efficient power conversion.
• Telecom Power Supplies: Employed in power supplies for telecommunications equipment, ensuring high reliability.
• Industrial Power Supplies: Applied in industrial power supplies for motor drives, PLCs, and other industrial equipment.
• Solar Inverters: Used in solar inverters to convert DC power from solar panels to AC power for grid connection.
• UPS (Uninterruptible Power Supplies): Incorporated in UPS systems to provide backup power during power outages.

Features

• CoolMOS™ CFD7A Technology: Utilizes Infineon's advanced CoolMOS™ technology for superior performance.
• Low On-State Resistance (RDS(on)): Minimizes conduction losses for high efficiency.
• Fast Switching Speed: Enables high-frequency operation with reduced switching losses.
• Robust Body Diode: Provides excellent reverse recovery performance for hard-switching topologies.
• Improved Thermal Resistance: Enhances heat dissipation for increased reliability.

Benefits

• High Efficiency: Reduces power consumption and heat generation.
• Improved System Reliability: Robust design ensures stable and reliable operation.
• Reduced System Cost: High efficiency allows for smaller heatsinks and reduced component count.
• Simplified Design: Easy to use in various power electronic topologies.
• Increased Power Density: Enables higher power density in power supply designs.

Additional Details

The IPB65R150CFDA has a breakdown voltage (VDS) of 650V and an on-state resistance (RDS(on)) of 0.15 Ohms. It is available in a TO-263 (D2PAK) package. This MOSFET is designed for hard-switching and resonant topologies, making it versatile for a wide range of applications. The fast body diode with reduced Qrr (reverse recovery charge) minimizes switching losses and improves efficiency. Its operating temperature range is typically from -55°C to +150°C. The device is also RoHS compliant, ensuring environmental safety. The CoolMOS™ CFD7A technology provides a significant improvement in switching performance compared to previous generations, making the IPB65R150CFDA an excellent choice for high-efficiency power supplies.