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Same model may have multiple batches, images only for reference.
IPB80N03S4L02ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB80N03S4L02ATMA1

Part No IPB80N03S4L02ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 90μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 9750pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045820-IPB80N03S4L02ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N03S4L02ATMA1 CAD Model

Description

The Infineon Technologies 1045820-IPB80N03S4L02ATMA1 is an N-channel MOSFET with a maximum power dissipation of 136W (Tc).

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Package: PG-TO263-3-2
  • Status: Active
  • Operating Temperature: -55°C to 175°C (TJ)
  • Popularity: Medium

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