The IPB80N04S2-04 is an OptiMOS™ power MOSFET from Infineon Technologies, designed for high-efficiency power conversion across a wide range of applications. This N-channel MOSFET stands out with its exceptionally low on-state resistance (RDS(on)) and is optimized for synchronous rectification and DC-DC conversion. It's engineered to minimize power losses and improve overall system efficiency.

Applications

• Synchronous rectification in switched-mode power supplies (SMPS)
• DC-DC converters
• High-frequency power conversion
• OR-ing and hot-swap applications
• Motor control

Features

• Optimized for high-frequency switching
• Ultra-low on-state resistance (RDS(on))
• Avalanche rated
• Logic level compatibility
• 100% lead-free and RoHS compliant

Benefits

• Significantly reduced power losses and improved efficiency due to the ultra-low RDS(on).
• Simplified gate drive requirements because of the logic-level compatibility, reducing complexity and cost.
• Enhanced system reliability and robustness with its avalanche ruggedness, providing protection against transient voltage spikes.
• Improved thermal performance allowing for higher power density designs.

Additional Details

The IPB80N04S2-04 features a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of 80A (depending on thermal conditions). The low gate charge (Qg) minimizes switching losses. This MOSFET is available in a PG-TO263-7 (D2PAK) package, which facilitates efficient heat dissipation. It's designed for reliable operation across a broad temperature range, making it suitable for various demanding environments. Its low RDS(on) ensures minimal conduction losses, contributing to improved system efficiency.