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Same model may have multiple batches, images only for reference.
IPB80N04S3-04 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB80N04S3-04

Part No IPB80N04S3-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 4.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200 pF @ 25 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-1
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Standard Package 225 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 603379-IPB80N04S3-04
Ultra Librarian 3D Model Ultra Librarian IPB80N04S3-04 CAD Model

Description

The IPB80N04S3-04 is a single N-Channel MOSFET designed for discrete semiconductor applications and manufactured by Infineon Technologies.

  • Category: Discrete Semiconductor Products - Transistors
  • Series: Automotive, AEC-Q101, OptiMOS™
  • Package: Bulk
  • Standard Package: 225 pcs
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 80A @ 25°C
  • Rds On (Max): 4.1mOhm @ 80A and 10V
  • Mounting Type: Surface mountable
  • Package/Case: TO-263-4, D²Pak
  • Gate Charge (Qg): 80nC @ 10V
  • Input Capacitance (Ciss): 5200pF @ 25V
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Status: Active product
  • REACH Compliance: Unaffected

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