The IPB80N06S2-09 is a CoolMOS™ Power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency switching applications. It features low on-state resistance (RDS(on)) and fast switching speeds, making it ideal for use in various power electronic circuits.

Applications

• Synchronous rectification in SMPS
• DC-DC converters
• Power tools
• Motor drives
• Adapter and charger applications

Features

• CoolMOS™ technology: Offers low on-state resistance and fast switching speeds.
• Low RDS(on): Reduces conduction losses and improves efficiency.
• Fast switching speed: Minimizes switching losses and improves overall performance.
• Avalanche rated: Provides robustness against voltage transients.
• 175°C operating temperature: Allows for operation in demanding thermal environments.
• Logic level compatible: Simplifies driving the MOSFET with microcontrollers and other logic devices.

Benefits

• High efficiency: Low RDS(on) and fast switching speeds contribute to high overall efficiency.
• Reduced power losses: Lower losses translate into reduced heat generation and improved system reliability.
• Simplified thermal management: Reduced heat generation simplifies thermal management requirements.
• Improved system performance: Fast switching speeds improve the dynamic performance of power electronic circuits.
• Increased power density: The MOSFET's efficient operation allows for higher power density in power electronic designs.

Additional Details

The IPB80N06S2-09 features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 80A at 25°C. Its on-state resistance (RDS(on)) is typically 0.009 ohms. The gate-source voltage (VGS) is typically ±20V. The device is typically packaged in a D2PAK (TO-263). The operating temperature range is from -55°C to 175°C.

This CoolMOS™ Power MOSFET is well-suited for a wide range of power electronic applications requiring high efficiency and fast switching speeds.