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IPB80N06S2L-05

Part No IPB80N06S2L-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186076-IPB80N06S2L-05
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S2L-05 CAD Model

Description

The IPB80N06S2L-05 is a highly efficient OptiMOS™ power MOSFET from Infineon Technologies, specifically designed for synchronous rectification in Switched Mode Power Supplies (SMPS). This N-channel MOSFET boasts an exceptionally low on-state resistance (Rds(on)) and optimized gate charge (Qg), leading to significant reductions in power losses and improved system efficiency. Its enhanced features make it an excellent choice for high-performance power conversion applications.

Applications:

  • Synchronous Rectification in AC-DC Power Supplies
  • DC-DC Converters
  • Notebook Adapters
  • Server Power Supplies
  • Telecommunications Equipment

Features:

  • Optimized for synchronous rectification
  • Extremely low on-state resistance (Rds(on)) for minimal conduction losses
  • Low gate charge (Qg) and gate resistance (Rg) for fast switching
  • Avalanche rated for robust performance
  • 100% avalanche tested
  • Pb-free lead finish; RoHS compliant
  • Logic Level (4.5V) driving capability

Benefits:

  • Maximum energy efficiency in synchronous rectification circuits
  • Reduced heat dissipation, enabling smaller and more efficient designs
  • Improved system reliability due to robust avalanche performance
  • Simplified gate drive requirements, reducing component count and cost
  • Higher power density due to optimized thermal performance
  • Environmentally friendly due to Pb-free and RoHS compliance

Additional Details:

The IPB80N06S2L-05 is an N-channel MOSFET with a drain-source voltage (Vds) rating of 60V and a continuous drain current (Id) rating of up to 80A (depending on the case temperature). Its typical Rds(on) is only 4.7 mΩ at Vgs=10V, which dramatically reduces conduction losses. The device comes in a TO-263 package, making it suitable for surface mount assembly. The logic-level gate drive allows for easy interfacing with microcontrollers and other low-voltage control circuits.

This device is designed for high switching frequencies. Its low gate charge and gate resistance ensure fast turn-on and turn-off times, minimizing switching losses. This results in cooler operation and increased overall efficiency of the power supply.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5292 $58.7628
22+ $5.3569 $117.8518
34+ $5.1894 $176.4396
46+ $5.0219 $231.0074
60+ $4.8545 $291.2700
80+ $4.3532 $348.2560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,003 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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