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IPB80N06S405ATMA2

Part No IPB80N06S405ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO263-3  /  N-Channel 60 V 80A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 25 V
Power Dissipation (Max) 107W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001028718
Standard Package 1,000
Win Source Part Number 979058-IPB80N06S405ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB80N06S405ATMA2 CAD Model

Description

The Infineon Technologies IPB80N06S405ATMA2 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Series: Automotive, AEC-Q101, OptiMOS™
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 80A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 60µA
  • Gate Charge (Qg) @ Vgs: 81 nC @ 10 V
  • Input Capacitance (Ciss) @ Vds: 6500 pF @ 25 V
  • Operating Temperature: -55°C to 175°C (TJ)
  • Mounting Type: SMD (SMT)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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