The IPB90N04S4-02 is a Power MOSFET from Infineon Technologies, part of the OptiMOS™ 4 family. It's an N-channel enhancement mode MOSFET designed for low voltage, high current applications where efficiency and power density are crucial. It features very low on-state resistance and optimized switching behavior.

Applications:

• Synchronous Rectification in SMPS
• DC-DC Converters
• Motor Control
• Battery Management Systems (BMS)
• OR-ing circuits

Features:

• Optimized for synchronous rectification: Designed for optimal efficiency in synchronous rectification topologies.
• Ultra Low R<sub>DS(on): Reduces conduction losses to a minimum.
• Low Qg and Qgs: Minimizes switching losses.
• Avalanche Rated: Offers robust and reliable performance.
• 100% Avalanche tested: Ensures high quality and reliability.
• Pb-free plating; RoHS compliant: Environmentally friendly and compliant with environmental regulations.

Benefits:

• High Efficiency: Reduces overall power losses within the system.
• Improved Power Density: Enables smaller and more compact designs.
• Enhanced System Reliability: Robust design ensures long-term and dependable performance.
• Reduced System Cost: Lower power losses often result in reduced cooling requirements.

Additional Details:

The IPB90N04S4-02 has a drain-source voltage (V<sub>DS) of 40 V and a continuous drain current (I<sub>D) of 90 A. The on-state resistance (R<sub>DS(on)) is typically 2.1 mΩ at V<sub>GS = 10 V. The device is available in a PG-TO263 package. This MOSFET is tailored for high-frequency switching applications and possesses a low gate charge, further minimizing switching losses. Its low on-resistance drastically reduces conduction losses, enhancing the overall efficiency of the system. It is well-suited for synchronous rectification in switched-mode power supplies (SMPS) and DC-DC converters where efficiency is paramount. Its robust design and avalanche rating make it a reliable choice for demanding applications.