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IPD038N04NG

Part No IPD038N04NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet Optimos 3 Pwr Transt 40V 90A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-252
Continuous Drain Current (ID) 90 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Resistance 3.8 mΩ
Drain to Source Voltage (Vdss) 40 V
Element Configuration Single
Fall Time 5.2 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 4.5 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 94 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
Power Dissipation 94 W
Rds On Max 3.8 mΩ
REACH SVHC No SVHC
Rise Time 4.2 ns
RoHS Compliant
Turn-Off Delay Time 20 ns
Turn-On Delay Time 17 ns
Win Source Part Number 965428-IPD038N04NG
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IPD038N04NG CAD Model

Description

The Infineon Technologies 965428-IPD038N04NG is a single element MOSFET transistor manufactured by Infineon Technologies.

  • Drain to Source Voltage (Vdss): 40 V
  • Continuous Drain Current (ID): 90 A
  • Mounting Type: surface mount
  • Number of Pins: 3
  • Input Capacitance: 4.5 nF
  • Power Dissipation: 94 W
  • Rise Time: 4.2 ns
  • Fall Time: 5.2 ns
  • Turn-On Delay Time: 17 ns
  • Turn-Off Delay Time: 20 ns
  • Drain to Source Resistance: 3.8 mΩ
  • Gate to Source Voltage (Vgs): 20 V
  • Compliance: RoHS compliant
  • Maximum Operating Temperature: 175 °C
  • Supply and Demand Status: shortage

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