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Same model may have multiple batches, images only for reference.
IPD060N03LGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD060N03LGATMA1

Part No IPD060N03LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO252-3
Datasheet
IPD060N03LGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 2400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1000315-IPD060N03LGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD060N03LGATMA1 CAD Model

Description

The IPD060N03LGATMA1 is an N-Channel MOSFET from Infineon Technologies that is designed for use in Discrete Semiconductor Products.

  • Maximum Power Dissipation: 56W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO252-3
  • Mounting Type: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 6 mOhm @ 30A, 10V
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5922 $59.2200
240+ $0.4859 $116.6160
370+ $0.4708 $174.1960
510+ $0.4555 $232.3050
660+ $0.4404 $290.6640
880+ $0.3948 $347.4240
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MOQ: 100 pcs
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