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Same model may have multiple batches, images only for reference.
IPD090N03LGBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD090N03LGBTMA1

Part No IPD090N03LGBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 40A TO252
Datasheet
IPD090N03LGBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1600pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 097145-IPD090N03LGBTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD090N03LGBTMA1 CAD Model

Description

The Infineon Technologies IPD090N03LGBTMA1 is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V and Continuous Drain Current of 40A at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 40A @ 25°C
  • Max Rds On: 9 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Max Gate Charge: 15nC @ 10V
  • Packaging: PG-TO252-3
  • Operating Temperature: -55°C to 175°C

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435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
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1,590+ $0.2183 $347.0970
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