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IPD110N12N3GATMA1

Part No IPD110N12N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 75A TO252-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 83μA (Typ)
Max Gate Charge 65nC @ 10V
Max Input Capacitance 4310pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045852-IPD110N12N3GATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD110N12N3GATMA1 CAD Model

Description

The Infineon Technologies IPD110N12N3GATMA1 is a high-performance N-Channel MOSFET designed for use in various electronic circuits.

  • Drain-Source Breakdown Voltage: 120V
  • Continuous Drain Current (25°C): 75A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 83μA
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 4310pF @ 60V
  • Maximum Rds On (Id, Vgs): 11 mOhm @ 75A, 10V
  • Case/Package: PG-TO252-3
  • Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9905 $54.4775
110+ $0.9278 $102.0580
170+ $0.8965 $152.4050
240+ $0.8338 $200.1120
315+ $0.8024 $252.7560
390+ $0.7711 $300.7290
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,020 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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