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IPD122N10N3GATMA1

Part No IPD122N10N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 59A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 46μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 12.2 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1001298-IPD122N10N3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD122N10N3GATMA1 CAD Model

Description

The Infineon Technologies IPD122N10N3GATMA1 is an N-channel MOSFET that is packaged in a PG-TO252-3.

  • Package: PG-TO252-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 59A @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 46μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 2500pF @ 50V
  • Maximum Rds On @ Id,Vgs: 12.2 mOhm @ 46A, 10V
  • Power Dissipation: 94W (Tc)
  • Category: discrete semiconductor products
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1712 $52.7040
105+ $0.9610 $100.9050
165+ $0.9310 $153.6150
225+ $0.9009 $202.7025
290+ $0.8709 $252.5610
385+ $0.7808 $300.6080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,178 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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