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IPD12N03LB

Part No IPD12N03LB
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 06Rohs
Reference case TO-252
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 753695-IPD12N03LB
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD12N03LB CAD Model

Description

The IPD12N03LB is a Trench MOSFET from Infineon Technologies. It's an N-channel enhancement mode power MOSFET designed for low voltage, high current applications. A key feature is its low on-state resistance (RDS(on)), which contributes to efficient power conversion. The 'LB' designation usually denotes a logic-level gate drive capability. This MOSFET is commonly used in DC-DC converters, load switches, and battery management systems.

Applications:

  • DC-DC Converters: Efficiently converting DC voltage levels.
  • Load Switches: Controlling power to various loads in electronic systems.
  • Battery Management Systems (BMS): Protecting and controlling charging/discharging of batteries.
  • Power Tools: Used in cordless power tools for efficient motor control.
  • Automotive Applications: Such as seat heating and other low-voltage power distribution systems.

Features:

  • Low On-Resistance (RDS(on)): Minimizes conduction losses for higher efficiency.
  • Logic Level Gate Drive: Can be directly driven by logic-level signals (e.g., 3.3V or 5V).
  • Avalanche Rated: Withstands voltage spikes.
  • Fast Switching Speed: Enables high-frequency operation.
  • 175°C Maximum Junction Temperature: Suitable for operation in demanding thermal conditions.

Benefits:

  • High Efficiency: Low RDS(on) reduces power dissipation, leading to increased efficiency.
  • Simplified Circuit Design: Logic-level gate drive simplifies the driving circuitry.
  • Robust Performance: Avalanche rating provides added protection against voltage transients.
  • Reduced Heat Dissipation: Lower power losses result in less heat generation and easier thermal management.
  • Compact and Efficient: Enables smaller and more efficient designs.

The IPD12N03LB is typically available in a PG-252-3 (DPAK) package. Important electrical specifications include a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 50A (thermally limited), and a typical RDS(on) of 12 mΩ at VGS = 4.5V. For detailed specifications, application notes, and thermal considerations, consult the Infineon datasheet.

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