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Same model may have multiple batches, images only for reference.
IPD135N08N3G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD135N08N3G

Part No IPD135N08N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 45A
Datasheet
IPD135N08N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 33μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1730pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068992-IPD135N08N3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD135N08N3G CAD Model

Description

The IPD135N08N3G is an N-channel MOSFET manufactured by Infineon Technologies.

  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 79W @ a case temperature of 25°C
  • Continuous Drain Current: 45A @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.5V @ 33μA
  • Drain-Source Breakdown Voltage: 80V
  • Maximum Rds On: 13.5 mOhm @ 45A and 10V
  • Temperature Range: -55°C to 175°C
  • Package: PG-TO252-3
  • Available: On a reel

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