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Same model may have multiple batches, images only for reference.
IPD16CNE8N G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD16CNE8N G

Part No IPD16CNE8N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 53A TO252-3
Datasheet
IPD16CNE8N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 85V
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 61μA
Gate Charge (Qg) (Maximum) @ Vgs 48nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3230pF @ 40V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 100W (Tc)
Rds On (Maximum) @ Id, Vgs 16 mOhm @ 53A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776860-IPD16CNE8N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD16CNE8N G CAD Model

Description

The Infineon Technologies OptiMOS series MOSFET is a high-quality electronic component manufactured by Infineon Technologies.

  • Continuous Drain Current: 53A
  • Maximum Drain-Source Voltage: 85V
  • Drive Voltage: 10V
  • Maximum Power Dissipation: 100W
  • Mounting: SMD
  • Status: Obsolete (EOL)
  • Supply: Limited
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4897 $58.7640
290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
795+ $0.3650 $290.1750
1,065+ $0.3269 $348.1485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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