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Same model may have multiple batches, images only for reference.
IPD230N06NG Real Image
Same model may have multiple batches, images only for reference.

IPD230N06NG

Part No IPD230N06NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A DPAK
Datasheet
IPD230N06NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 50μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 068994-IPD230N06NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD230N06NG CAD Model

Description

The Infineon Technologies IPD230N06NG is a MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 100W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 50μA
  • Maximum Rds on @ Id, Vgs: 23 mOhm @ 30A, 10V
  • Package: PG-TO252-3
  • Mounting: SMD (SMT) technology
  • Type: N-channel MOSFET
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.4923 $58.4307
22+ $5.3269 $117.1918
34+ $5.1605 $175.4570
47+ $4.9942 $234.7274
60+ $4.8279 $289.6740
81+ $4.3289 $350.6409
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Availability: 4,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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