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Same model may have multiple batches, images only for reference.
IPI60R099CPAAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI60R099CPAAKSA1

Part No IPI60R099CPAAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 31A TO-262
Datasheet
IPI60R099CPAAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.2mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 18A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 136347-IPI60R099CPAAKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI60R099CPAAKSA1 CAD Model

Description

The Infineon Technologies IPI60R099CPAAKSA1 is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 31A
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 18A, 10V.
  • Supply and Demand Status: Limited supply and demand status

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.6604 $58.6416
10+ $12.0293 $120.2930
15+ $11.6540 $174.8100
21+ $11.2774 $236.8254
27+ $10.9020 $294.3540
36+ $9.7736 $351.8496
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,700 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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