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Same model may have multiple batches, images only for reference.
IPD30N03S2L07ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD30N03S2L07ATMA1

Part No IPD30N03S2L07ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A TO252-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 85μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 1900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 6.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045860-IPD30N03S2L07ATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD30N03S2L07ATMA1 CAD Model

Description

The Infineon Technologies IPD30N03S2L07ATMA1 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 30A
  • Maximum Rds On: 6.7 mOhm @ 30A and 10V
  • Gate-Source Threshold Voltage: 2V @ 85μA
  • Maximum Gate Charge: 68nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO252-3 case
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 136W (Tc)
  • Applications: Automotive, computers & computer peripherals, communications & networking, consumer electronics, lighting, sensing & instrumentation, and industrial

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