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IPD30N08S2-22

Name: IPD30N08S2-22
Brand: Infineon Technologies
SKU: 158386
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IPD30N08S2-22
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 75V 30A TO252-3
Datasheet	IPD30N08S2-22 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	75V
Continuous Drain Current at 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 80μA
Max Gate Charge	57nC @ 10V
Max Input Capacitance	1400pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	136W (Tc)
Maximum Rds On at Id,Vgs	21.5 mOhm @ 50A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Dimension	TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number	205225-IPD30N08S2-22
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPD30N08S2-22 CAD Model

Description

The Infineon Technologies IPD30N08S2-22 is a N-Channel MOSFET transistor with a drain-source breakdown voltage of 75V and a continuous drain current of 30A @ 25°C.

Drain-Source Breakdown Voltage: 75V
Continuous Drain Current: 30A @ 25°C
Maximum Power Dissipation: 136W
Package: PG-TO252-3
Supply and Demand Status: Balance

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
50+	$1.2397	$61.9850
115+	$1.0172	$116.9780
180+	$0.9854	$177.3720
245+	$0.9537	$233.6565
315+	$0.9218	$290.3670
420+	$0.8265	$347.1300

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 6,388 pieces

MOQ: 50 pcs

Order Increment : 1 pcs

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