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Same model may have multiple batches, images only for reference.
IPD40DP06NMATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD40DP06NMATMA1

Part No IPD40DP06NMATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 4.3A TO252-3  /  P-Channel 60 V 4.3A (Tc) 19W (Tc) Surface Mount PG-TO252-3-313
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 166µA
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 30 V
Power Dissipation (Max) 19W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD40DP06
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP004987264
Standard Package 2,500
Win Source Part Number 1123157-IPD40DP06NMATMA1
Ultra Librarian 3D Model Ultra Librarian IPD40DP06NMATMA1 CAD Model

Description

The Infineon Technologies IPD40DP06NMATMA1 is a P-channel MOSFET transistor that belongs to the OptiMOS™ series.

  • Series: OptiMOS™
  • Channel Type: P-channel
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 4.3A (Tc)
  • Maximum Rds On @ 4.3A, 10V: 400mOhm
  • Vgs(th) @ 166µA: 4V
  • Power Dissipation @ Tc: 19W
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate Charge (Qg) @ 10Vgs: 6.7 nC
  • Input Capacitance (Ciss) @ 30Vds: 260 pF
  • Temperature Range: -55°C to 175°C
  • ECCN: EAR99

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1,220+ $0.2846 $347.2120
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