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Same model may have multiple batches, images only for reference.
IPD50N04S3-08 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD50N04S3-08

Part No IPD50N04S3-08
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A TO252-3
Datasheet
IPD50N04S3-08 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 40μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045865-IPD50N04S3-08
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50N04S3-08 CAD Model

Description

The IPD50N04S3-08 is a N-channel MOSFET designed by Infineon Technologies.

  • Power Dissipation (Tc): 68W
  • Continuous Drain Current (Tc): 50A
  • Temperature Range (TJ): -55°C to 175°C

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Quantity Unit Price Ext. Price
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155+ $0.7471 $115.8005
240+ $0.7237 $173.6880
330+ $0.7004 $231.1320
430+ $0.6770 $291.1100
575+ $0.6070 $349.0250
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Availability: 36,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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