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IPD50R650CE

Part No IPD50R650CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 500V CoolMOS™ CE Power MOSFET
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Reel - TR
Channel Type Type N
Technology MOSFET
Drain Source Voltage 500V
Current - Continuous Drain (Id) @ 25°C 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Vgs(th) (Maximum) @ Id 3.5V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 342pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 47W (Tc)
Rds On (Maximum) @ Id, Vgs 650 mOhm @ 1.8A, 13V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1186158-IPD50R650CE
Manufacturer Homepage www.infineon.com
Family Name IPD50R650CE
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD50R650CE CAD Model

Description

The Infineon Technologies IPD50R650CE is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Series: CoolMOS
  • Drain-Source Voltage: 500 V
  • Continuous Drain Current: 6.1 A @ 25°C
  • Maximum Power Dissipation: 47 W @ 25°C
  • Package Type: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: surface mountable
  • Operating Temperature Range: -55°C to 150°C
  • Supplied In: reel
  • Quantity: 1
  • Feature: low on-resistance
  • Suitability: suitable for high voltage applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6144 $52.2240
200+ $0.5042 $100.8400
310+ $0.4884 $151.4040
425+ $0.4727 $200.8975
550+ $0.4569 $251.2950
735+ $0.4096 $301.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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