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Same model may have multiple batches, images only for reference.
IPD530N15N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD530N15N3GATMA1

Part No IPD530N15N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 21A
Datasheet
IPD530N15N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 887pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 53 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1006053-IPD530N15N3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD530N15N3GATMA1 CAD Model

Description

The Infineon Technologies IPD530N15N3GATMA1 is an N-channel MOSFET that has a drain-source breakdown voltage of 150V and a continuous drain current of 21A @ 25°C.

  • Channel: N-channel
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 21A @ 25°C
  • Power Dissipation: 68W (maximum)
  • Package: PG-TO252-3
  • Gate-Source Threshold Voltage: 4V @ 35μA
  • Rds On: 53 mOhm @ 18A and 10V (maximum)
  • Application: discrete semiconductor products
  • Popularity: medium

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115+ $0.8836 $101.6140
180+ $0.8560 $154.0800
245+ $0.8284 $202.9580
315+ $0.8008 $252.2520
420+ $0.7180 $301.5600
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