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Same model may have multiple batches, images only for reference.
IPD600N25N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD600N25N3GATMA1

Part No IPD600N25N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 25A
Datasheet
IPD600N25N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 2350pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045875-IPD600N25N3GATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD600N25N3GATMA1 CAD Model

Description

The Infineon Technologies IPD600N25N3GATMA1 is a MOSFET transistor designed for use in various electronic applications.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current (25°C): 25A @ 25°C
  • Maximum Rds On (Id, Vgs): 60 mOhm @ 25A, 10V
  • Gate-Source Threshold Voltage: 4V @ 90μA
  • Maximum Gate Charge: 29nC @ 10V
  • Maximum Input Capacitance: 2350pF @ 100V
  • Case/Package: PG-TO252-3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply and Demand Status: Sufficient

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50+ $3.0075 $150.3750
69+ $2.9105 $200.8245
89+ $2.8135 $250.4015
119+ $2.5224 $300.1656
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