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IPD60R520CP

Part No IPD60R520CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CP
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 100 V
Power Dissipation (Max) 66W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD60R
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603479-IPD60R520CP
Ultra Librarian 3D Model Ultra Librarian IPD60R520CP CAD Model

Description

The IPD60R520CP is a N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ CP
  • Product Category: Discrete Semiconductor
  • Drain-to-Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 6.8A
  • Rds On (Max): 520mOhm @ Id 3.8A and Vgs 10V
  • Gate Charge (Qg): 31nC @ Vgs 10V
  • Mounting Style: Surface Mount
  • Package: TO-252-3, DPak
  • Temperature Range: -55°C to 150°C
  • Application: Suitable for various industrial and automotive applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.5047 $63.0282
14+ $8.6198 $120.6772
21+ $8.3495 $175.3395
29+ $8.0804 $234.3316
37+ $7.8113 $289.0181
50+ $7.0028 $350.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,130 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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