The IPD65R190C7 is a CoolMOS™ power MOSFET from Infineon Technologies. This MOSFET is designed for high-voltage, high-efficiency power conversion applications.

Applications

• Switched-mode power supplies (SMPS)
• Lighting
• Server power supplies
• Solar inverters

Features

• Superjunction MOSFET
• Reduced switching and conduction losses
• Increased system reliability
• Easy to use/drive
• Qualified for industrial applications according to JEDEC (J-STD20 and JESD22)

Benefits

• Higher efficiency power supplies
• Reduced system cost
• Simplified thermal management

Additional Details

The IPD65R190C7 has a drain-source voltage (Vds) of 650V and an on-resistance (Rds(on)) of 0.19 Ohm. It is available in a PG-TO252-3 package. The device is suitable for resonant topologies, such as LLC. This MOSFET is designed with a low gate charge (Qg) to minimize switching losses. The device is RoHS compliant. Its low reverse recovery charge (Qrr) contributes to its efficiency in hard-switching topologies. The CoolMOS™ C7 technology allows for high commutation ruggedness, and makes the device very robust.