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Same model may have multiple batches, images only for reference.
IPD65R1K4CFDBTMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD65R1K4CFDBTMA1

Part No IPD65R1K4CFDBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 2.8A TO-252
Datasheet
IPD65R1K4CFDBTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 262pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 28.4W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045883-IPD65R1K4CFDBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD65R1K4CFDBTMA1 CAD Model

Description

The Infineon Technologies 1045883-IPD65R1K4CFDBTMA1 is an N-Channel MOSFET transistor that can handle a maximum power dissipation of 28.4W (Tc).

  • Designed for: use in Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Package: PG-TO252-3
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), and SC-63
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current @ 25°C: 2.8A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 100μA
  • Maximum Gate Charge: 10nC @ 10V
  • Maximum Input Capacitance: 262pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 1.4 Ohm @ 1A, 10V
  • Popularity: medium popularity
  • Supply and Demand Status: balanced

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