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IPD65R225C7ATMA1

Part No IPD65R225C7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11A TO252-3  /  N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 225mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996 pF @ 400 V
Power Dissipation (Max) 63W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD65R225
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPD65R225C7ATMA1CT,SP000929430,IPD65R225C7ATMA1DKR,IPD65R225C7ATMA1TR
Standard Package 2,500
Win Source Part Number 1001313-IPD65R225C7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD65R225C7ATMA1 CAD Model

Description

The IPD65R225C7ATMA1 is a discrete semiconductor product - transistor FET manufactured by Infineon Technologies. It has a drain to source voltage (Vdss) of 650 V and a current - continuous drain (Id) @ 25°C of 11A (Tc).

  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • ECCN: EAR99
  • Maximum Power Dissipation: 63W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.5083 $60.5913
23+ $5.1531 $118.5213
35+ $4.9753 $174.1355
51+ $4.6199 $235.6149
66+ $4.4423 $293.1918
82+ $4.2646 $349.6972
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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