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SI1036X-T1-GE3

Part No SI1036X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 610mA (Ta)
Rds On (Max) @ Id, Vgs 540mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 15V
Power - Max 220mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89-6
Base Product Number SI1036
Other Names 742-SI1036X-T1-GE3CT,742-SI1036X-T1-GE3TR,742-SI1036X-T1-GE3DKR,SI1036X-T1-GE3
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1278491-SI1036X-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI1036X-T1-GE3 CAD Model

Description

The Vishay Siliconix SI1036X-T1-GE3 is a TrenchFET® dual N-channel MOSFET array manufactured by Vishay Siliconix.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 610mA (Ta) @ 25°C
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 15V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5097 $58.6155
245+ $0.4769 $116.8405
380+ $0.4604 $174.9520
545+ $0.4276 $233.0420
705+ $0.4111 $289.8255
880+ $0.3947 $347.3360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,060 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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