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IPD65R600C6BTMA1

Part No IPD65R600C6BTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 7.3A TO252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 210μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 440pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045887-IPD65R600C6BTMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD65R600C6BTMA1 CAD Model

Description

The Infineon Technologies IPD65R600C6BTMA1 is a N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 7.3A @ 25°C
  • Maximum Rds On: 600 mOhm @ 2.1A and 10V
  • Gate-Source Threshold Voltage: 3.5V @ 210μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 440pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO252-3
  • Mounting: SMD (SMT)
  • Power Dissipation: 63W (Tc)
  • Applications: Automotive, computers & computer peripherals, communications & networking, consumer electronics, lighting, sensing & instrumentation, and industrial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8858 $53.1480
140+ $0.7269 $101.7660
215+ $0.7041 $151.3815
295+ $0.6814 $201.0130
380+ $0.6587 $250.3060
510+ $0.5906 $301.2060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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