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Same model may have multiple batches, images only for reference.
IPD65R950C6ATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD65R950C6ATMA1

Part No IPD65R950C6ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO252-3
Datasheet
IPD65R950C6ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 200μA
Max Gate Charge 15.3nC @ 10V
Max Input Capacitance 328pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045889-IPD65R950C6ATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD65R950C6ATMA1 CAD Model

Description

The MOSFET with Win Source Part Number 1045889-IPD65R950C6ATMA1 is an N-channel power MOSFET that features a drain-source breakdown voltage of 650V from Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 1045889-IPD65R950C6ATMA1
  • Type: N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 4.5A (Tc)
  • Package: PG-TO252-3
  • Applications: Power Supplies and Motor Control Circuits
  • Maximum Rds On: 950 mOhm @ 1.5A, 10V
  • Maximum Gate Charge: 15.3nC @ 10V
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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570+ $0.6109 $348.2130
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