The IPD65R950CFD is a CoolMOS™ CFD7 series power MOSFET from Infineon Technologies. This MOSFET is designed for high-efficiency switched-mode power supplies (SMPS) and other power electronics applications where low conduction and switching losses are critical. It is built using Infineon's advanced superjunction technology, offering superior performance compared to traditional MOSFETs.

Applications

• Switched-Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• DC-DC Converters
• Uninterruptible Power Supplies (UPS)
• Lighting Systems

Features

• CoolMOS™ CFD7 Technology: Offers best-in-class efficiency and reliability.
• Superjunction MOSFET: Provides extremely low on-resistance (RDS(on)) and gate charge (Qg).
• Integrated Fast Body Diode: Improves robustness and reduces reverse recovery losses.
• Low Switching Losses: Minimizes energy dissipation during switching transitions.
• Avalanche Rated: Ensures safe operation under transient voltage conditions.
• Pb-free and RoHS Compliant: Meets environmental regulations.

Benefits

• High Efficiency: Reduces power consumption and heat generation, leading to lower operating costs and improved system reliability.
• Lower On-Resistance: Minimizes conduction losses, enabling higher power density and improved efficiency.
• Fast Switching Speed: Reduces switching losses, allowing for higher switching frequencies and smaller passive components.
• Enhanced Robustness: Provides reliable operation under harsh conditions, such as high temperatures and voltage transients.
• Simplified Design: Reduces the number of external components needed, simplifying circuit design and lowering manufacturing costs.
• Improved Thermal Performance: Enables efficient heat dissipation, ensuring stable operation and longer component lifespan.

Additional Details

The IPD65R950CFD features a drain-source voltage (VDS) rating of 650V and a typical on-resistance (RDS(on)) of 0.95 Ohms. The CoolMOS™ CFD7 technology incorporates an integrated fast body diode, which significantly reduces reverse recovery charge (Qrr) and reverse recovery time (trr), resulting in lower switching losses and improved efficiency. This MOSFET is available in a through-hole package (TO-252), making it suitable for a wide range of applications. Infineon provides detailed datasheets and application notes that provide comprehensive guidance on using the IPD65R950CFD in various power electronics designs. The device is designed to meet stringent quality and reliability standards, ensuring long-term performance in demanding applications.