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IPD70R900P7SAUMA1

Part No IPD70R900P7SAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 12.8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 700V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 60μA
Max Gate Charge 6.8nC @ 10V
Max Input Capacitance 211pF @ 400V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 30.5W (Tc)
Maximum Rds On at Id,Vgs 900 mOhm @ 1.1A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1006936-IPD70R900P7SAUMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPD70R900P7SAUMA1 CAD Model

Description

The IPD70R900P7SAUMA1 is a MOSFET transistor designed for use in discrete semiconductor products and manufactured by Infineon Technologies.

  • Polarity: N-channel
  • Maximum Power Dissipation: 30.5W (Tc)
  • Drain-Source Breakdown Voltage: 700V
  • Continuous Drain Current: up to 6A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 60μA
  • Maximum Input Capacitance: 211pF @ 400V
  • Maximum Rds On: 900 mOhm @ 1.1A and 10V
  • Case/Package: PG-TO252-3
  • Supply: limited supply
  • Popularity: medium popularity rating

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2688 $51.0720
400+ $0.2515 $100.6000
620+ $0.2428 $150.5360
890+ $0.2255 $200.6950
1,155+ $0.2168 $250.4040
1,445+ $0.2082 $300.8490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 278,960 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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