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IPD80R750P7ATMA1

Part No IPD80R750P7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 7A TO252-3  /  N-Channel 800 V 7A (Tc) 51W (Tc) Surface Mount PG-TO252-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 460 pF @ 500 V
Power Dissipation (Max) 51W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD80R750
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPD80R750P7ATMA1CT,IPD80R750P7ATMA1TR,ROCINFIPD80R750P7ATMA1,SP001644282,2156-IPD80R750P7ATMA1,IPD80R750P7ATMA1DKR
Standard Package 2,500
Win Source Part Number 1065254-IPD80R750P7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD80R750P7ATMA1 CAD Model

Description

The IPD80R750P7ATMA1 is a CoolMOS™ P7 MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 7A @ 25°C
  • On-Resistance: 750mOhm
  • Maximum Gate Charge: 17nC @ 10V
  • Series: CoolMOS™ P7
  • Package: TO-252-3, DPak
  • Leads: 2 leads and a tab

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0503 $57.7665
135+ $0.8618 $116.3430
210+ $0.8348 $175.3080
290+ $0.8080 $234.3200
370+ $0.7810 $288.9700
495+ $0.7002 $346.5990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,300 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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