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IPG15N06S3L-45

Part No IPG15N06S3L-45
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 55V 15A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 15A
Maximum Rds On at Id,Vgs 45 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.2V @ 10μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1420pF @ 25V
Maximum Power Dissipation 21W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8-4
Win Source Part Number 1001585-IPG15N06S3L-45
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPG15N06S3L-45 CAD Model

Description

The supply and demand status is sufficient.

  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic level gate
  • Temperature Range - Operating: -55°C to 175°C (TJ)
  • Case / Package: PG-TDSON-8-4
  • Maximum Power Dissipation: 21W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current at 25°C: 15A
  • Gate-Source Threshold Voltage: 2.2V @ 10μA
  • Max Gate Charge: 20nC @ 10V
  • Max Input Capacitance: 1420pF @ 25V
  • Maximum Rds On at Id,Vgs: 45 mOhm @ 10A, 10V

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