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Same model may have multiple batches, images only for reference.
IPI030N10N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI030N10N3GXKSA1

Part No IPI030N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A
Datasheet
IPI030N10N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 275μA
Max Gate Charge 206nC @ 10V
Max Input Capacitance 14800pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 136578-IPI030N10N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI030N10N3GXKSA1 CAD Model

Description

The IPI030N10N3GXKSA1 is a MOSFET electronic component manufactured by Infineon Technologies.

  • Manufacturer: Infineon Technologies
  • Polarity: N-channel
  • Maximum Power Dissipation: 300W (Tc)
  • Package: PG-TO262-3
  • Dimensions: Long leads, I2Pak, and TO-262AA
  • Mounting: Through-hole
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 275μA
  • Maximum Gate Charge: 206nC @ 10V
  • Maximum Input Capacitance: 14800pF @ 50V
  • Maximum Rds On @ Id,Vgs: 3 mOhm @ 100A, 10V
  • Supply and Demand Status: limited

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111+ $3.1289 $347.3079
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