The TK39N60W5 is a 600V, 39A N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power switching applications, offering a good balance between on-resistance and gate charge. It is available in a TO-247 package for excellent heat dissipation.

Applications

• Power factor correction (PFC) circuits
• Switch-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Solar inverters
• Motor drives
• Induction heating

Features

• V<sub>DSS: 600V
• I<sub>D: 39A
• R<sub>DS(on) (Max): 0.092 Ω @ V<sub>GS = 10V
• Low gate charge
• High avalanche capability
• Fast switching speed
• TO-247 package

Benefits

• High Efficiency: Low on-resistance reduces conduction losses, improving overall system efficiency.
• Reliable Operation: High avalanche capability ensures robust performance under transient conditions.
• Simplified Thermal Design: The TO-247 package facilitates efficient heat dissipation, simplifying thermal management.
• Fast Switching: Low gate charge enables fast switching speeds, reducing switching losses.
• Cost-Effective Solution: Offers a good balance of performance and cost for various power applications.

Technical Specifications

The TK39N60W5 has a drain-source voltage (V<sub>DSS) of 600V and a continuous drain current (I<sub>D) of 39A. The maximum on-resistance (R<sub>DS(on)) is 0.092 Ω at a gate-source voltage (V<sub>GS) of 10V. The MOSFET's operating temperature range is -55°C to +150°C. Refer to the datasheet for specific pulse current and power dissipation values, as well as detailed thermal resistance information.