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Same model may have multiple batches, images only for reference.
IPI032N06N3GAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI032N06N3GAKSA1

Part No IPI032N06N3GAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 120A TO262-3  /  N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
Datasheet
IPI032N06N3GAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 118µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 30 V
Power Dissipation (Max) 188W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI032
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPI032N06N3GAKSA1,SP000680650,IFEINFIPI032N06N3GAKSA1
Standard Package 500
Win Source Part Number 1065259-IPI032N06N3GAKSA1
Ultra Librarian 3D Model Ultra Librarian IPI032N06N3GAKSA1 CAD Model

Description

The IPI032N06N3GAKSA1 is an N-channel MOSFET transistor from Infineon Technologies.

  • Maximum Power Dissipation: 188W
  • Voltage Breakdown: 60 V
  • Continuous Drain Current: 120 A
  • Rds On: 3.2mOhm @ 100A, 10V
  • Gate Charge: 165 nC @ 10 V
  • Input Capacitance: 13000 pF @ 30 V
  • Package: TO-262-3 Long Leads, I²Pak
  • Temperature Range: -55°C to 175°C

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