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Same model may have multiple batches, images only for reference.
IPI126N10N3 G Real Image
Same model may have multiple batches, images only for reference.

IPI126N10N3 G

Part No IPI126N10N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 58A TO262-3
Datasheet
IPI126N10N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 46μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 12.6 mOhm @ 46A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1045922-IPI126N10N3 G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI126N10N3 G CAD Model

Description

The Infineon Technologies IPI126N10N3 G is a MOSFET transistor designed for use in discrete semiconductor products.

  • Power Dissipation: 94W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 58A
  • Maximum Rds On @ Id,Vgs: 12.6 mOhm @ 46A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 46μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 2500pF @ 50V
  • Maximum Gate-Source Voltage: ±20V
  • Technology: N-Channel
  • Mounting: Through Hole
  • Packaging: Tube/Rail
  • Case / Package: PG-TO262-3
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balance

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